Semiconductor device and method of fabricating the same

ABSTRACT

A semiconductor device may include a strain relaxed buffer layer provided on a substrate to contain silicon germanium, a semiconductor pattern provided on the strain relaxed buffer layer to include a source region, a drain region, and a channel region connecting the source region with the drain region, and a gate electrode enclosing the channel region and extending between the substrate and the channel region. The source and drain regions may contain germanium at a concentration of 30 at % or higher.

CROSS-REFERENCE TO RELATED APPLICATION

This U.S. non-provisional patent application claims priority under 35U.S.C. §119 to Korean Patent Application No. 10-2014-0050169, filed onApr. 25, 2014, in the Korean Intellectual Property Office, the entirecontents of which are hereby incorporated by reference.

1. TECHNICAL FIELD

Example embodiments of the inventive concept relate to a semiconductordevice and a method of fabricating the same, and in particular, to asemiconductor device with a field effect transistor and a method offabricating the same.

2. DESCRIPTION OF RELATED ART

Semiconductor devices are increasingly being used in consumer,commercial, and other electronic devices. Semiconductor devices may beclassified into a memory device for storing data, a logic device forprocessing data, and a hybrid device including both of memory and logicelements. Due to the increased demand for electronic devices with fastspeed and/or low power consumption, semiconductor devices are used toprovide high reliability, high performance, and/or multiple functions.To satisfy these technical requirements, complexity and/or integrationdensity of semiconductor devices are being increased.

SUMMARY

Example embodiments of the inventive concept provide a semiconductordevice, in which a nano wire with high germanium concentration isprovided.

Other example embodiments of the inventive concept provide a method offabricating a semiconductor device, in which a nano wire with highgermanium concentration is provided.

According to example embodiments of the inventive concept, asemiconductor device may include a strain relaxed buffer layer providedon a substrate, the strain relaxed buffer layer containing silicongermanium; a semiconductor pattern provided on the strain relaxed bufferlayer, the semiconductor pattern including a source region, a drainregion, and a channel region connecting the source region with the drainregion; and a gate electrode enclosing the channel region and extendingbetween the substrate and the channel region. The source and drainregions contain germanium at a concentration of 30 atomic percent (at %)or more.

In example embodiments, the strain relaxed buffer layer containsgermanium at a concentration of 30 at % or less.

In example embodiments, the channel region contains germanium at aconcentration of 60 at % or more.

In example embodiments, the strain relaxed buffer layer may have arecessed region adjacent to the channel region, and the gate electrodeextends into the recessed region.

In example embodiments, a germanium concentration of the strain relaxedbuffer layer may be higher at a portion adjacent to the recessed regionthan at another portion adjacent to the source and drain regions.

In example embodiments, the strain relaxed buffer layer may include aplurality of buffer layers stacked on the substrate, and thesemiconductor pattern may include a plurality of semiconductor layersstacked on the substrate. The buffer layers and the semiconductor layersmay be alternatingly stacked one on top of another.

According to example embodiments of the inventive concept, asemiconductor device may include a substrate including a first regionand a second region; a strain relaxed buffer layer provided on thesubstrate, the strain relaxed buffer layer containing silicon germanium;a first transistor provided on the strain relaxed buffer layer of thefirst region, the first transistor including a first channel regionprotruding from the substrate and a first gate electrode covering a sidesurface of the first channel region; and a second transistor provided onthe strain relaxed buffer layer of the second region, the secondtransistor including a second channel region and a second gate electrodeenclosing the second channel region and extending between the substrateand the second channel region. The first and second channel regionscontain silicon, and a germanium concentration of the second channelregion may be higher than that of the first channel region.

In example embodiments, the first channel region may include a siliconlayer, and the second channel region may be a silicon germanium layer.

In example embodiments, the second transistor may further includesource/drain regions at both sides of the second channel region. Thesource/drain regions may include a silicon germanium layer and may havea germanium concentration that is higher than that of the strain relaxedbuffer layer.

In example embodiments, the source/drain regions may contain germaniumat a concentration of 30 at % or more.

In example embodiments, the first and second gate electrodes may includean aluminum-containing metal layer.

In example embodiments, an aluminum concentration of the first gateelectrode may be higher than that of the second gate electrode.

In example embodiments, the first and second gate electrodes furtherinclude a tungsten layer provided on the metal layer.

In example embodiments, the first transistor may be an NMOS transistorand the second transistor may be a PMOS transistor.

According to example embodiments of the inventive concept, a method offabricating a semiconductor device may include forming a strain relaxedbuffer layer containing silicon germanium, on a substrate; forming asemiconductor pattern on the strain relaxed buffer layer, thesemiconductor pattern including a channel region and source/drainregions at both sides of the channel region; recessing an upper portionof the strain relaxed buffer layer using an insulating pattern coveringthe source/drain regions; selectively removing a portion of the strainrelaxed buffer layer positioned below the channel region to form a gapregion; and forming a gate electrode to enclose the channel region ofthe semiconductor pattern. The semiconductor pattern may be formed tocontain germanium at a concentration of 30 at % or more.

In example embodiments, the strain relaxed buffer layer may be formed tocontain germanium at a concentration of 30 at % or less.

In example embodiments, the method may further include performing asurface treatment process to round a surface of the channel region,after the forming of the gap region.

In example embodiments, the surface treatment process may include athermal treatment process in an oxidizing atmosphere.

In example embodiments, the surface treatment process may be performedto result in the channel region having a higher germanium concentrationthan that of the source/drain regions.

In example embodiments, the channel region may be formed to containgermanium at a concentration of 60 at % or more.

BRIEF DESCRIPTION OF THE DRAWINGS

Example embodiments will be more clearly understood from the followingbrief description taken in conjunction with the accompanying drawings.The accompanying drawings represent non-limiting, example embodiments asdescribed herein.

FIGS. 1A through 7A are plan views illustrating a method of fabricatinga semiconductor device according to example embodiments of the inventiveconcept.

FIGS. 1B through 7B are sectional views taken along lines I-I′, II-II′,and III-III′ of FIGS. 1A through 7A, respectively.

FIGS. 8A through 12A are plan views illustrating a method of fabricatinga semiconductor device according to other example embodiments of theinventive concept.

FIGS. 8B through 12B are sectional views taken along lines I-I′, II-II′,and III-III′ of FIGS. 8A through 12A, respectively.

FIGS. 13A through 19A are plan views illustrating a method offabricating a semiconductor device according to still other exampleembodiments of the inventive concept.

FIGS. 13B through 19B are sectional views taken along lines I-I′,II-II′, and III-III′ of FIGS. 13A through 19A, respectively.

FIGS. 13C through 19C are sectional views taken along lines IV-IV′,V-V′, and VI-VI′ of FIGS. 13A through 19A, respectively.

FIG. 20 is a schematic block diagram illustrating an example ofelectronic systems including a semiconductor device according to exampleembodiments of the inventive concept.

FIG. 21 is a schematic view illustrating an example of variouselectronic devices, to which the electronic system 1100 of FIG. 20 canbe applied.

It should be noted that these figures are intended to illustrate thegeneral characteristics of methods, structure and/or materials utilizedin certain example embodiments and to supplement the written descriptionprovided below. These drawings are not, however, to scale and may notprecisely reflect the precise structural or performance characteristicsof any given embodiment, and should not be interpreted as defining orlimiting the range of values or properties encompassed by exampleembodiments. For example, the relative thicknesses and positioning ofmolecules, layers, regions and/or structural elements may be reduced orexaggerated for clarity. The use of similar or identical referencenumbers in the various drawings is intended to indicate the presence ofa similar or identical element or feature.

DETAILED DESCRIPTION

Example embodiments of the inventive concepts will now be described morefully with reference to the accompanying drawings, in which exampleembodiments are shown. Example embodiments of the inventive conceptsmay, however, be embodied in many different forms and should not beconstrued as being limited to the embodiments set forth herein. In thedrawings, the thicknesses of layers and regions are exaggerated forclarity. Like reference numerals in the drawings denote like elements,and thus their description may be omitted.

As used herein the term “and/or” includes any and all combinations ofone or more of the associated listed items.

It will be understood that when an element is referred to as being“connected” or “coupled” to another element, it can be directlyconnected or coupled to the other element or intervening elements may bepresent. Other words used to describe the relationship between elementsor layers should be interpreted in a like fashion (e.g., “between”versus “directly between,” “adjacent” versus “directly adjacent,” “on”versus “directly on”). However, the term “contact,” as used hereinrefers to direct contact (i.e., touching) unless the context indicatesotherwise.

It will be understood that, although the terms “first”, “second”, etc.may be used herein to describe various elements, components, regions,layers and/or sections, these elements, components, regions, layersand/or sections should not be limited by these terms. Unless the contextindicates otherwise, these terms are only used to distinguish oneelement, component, region, layer or section from another element,component, region, layer or section. Thus, a first element, component,region, layer or section discussed below could be termed a secondelement, component, region, layer or section without departing from theteachings of example embodiments.

Spatially relative terms, such as “beneath,” “below,” “lower,” “above,”“upper” and the like, may be used herein for ease of description todescribe one element or feature's relationship to another element(s) orfeature(s) as illustrated in the figures. It will be understood that thespatially relative terms are intended to encompass differentorientations of the device in use or operation in addition to theorientation depicted in the figures. For example, if the device in thefigures is turned over, elements described as “below” or “beneath” otherelements or features would then be oriented “above” the other elementsor features. Thus, the exemplary term “below” can encompass both anorientation of above and below. The device may be otherwise oriented(rotated 90 degrees or at other orientations) and the spatially relativedescriptors used herein interpreted accordingly.

The terminology used herein is for the purpose of describing particularembodiments only and is not intended to be limiting of exampleembodiments. As used herein, the singular forms “a,” “an” and “the” areintended to include the plural forms as well, unless the context clearlyindicates otherwise. It will be further understood that the terms“comprises”, “comprising”, “includes” and/or “including,” if usedherein, specify the presence of stated features, integers, steps,operations, elements and/or components, but do not preclude the presenceor addition of one or more other features, integers, steps, operations,elements, components and/or groups thereof.

Example embodiments of the inventive concepts are described herein withreference to cross-sectional illustrations that are schematicillustrations of idealized embodiments (and intermediate structures) ofexample embodiments. As such, variations from the shapes of theillustrations as a result, for example, of manufacturing techniquesand/or tolerances, are to be expected. Thus, example embodiments of theinventive concepts should not be construed as limited to the particularshapes of regions illustrated herein but are to include deviations inshapes that result, for example, from manufacturing. For example, animplanted region illustrated as a rectangle may have rounded or curvedfeatures and/or a gradient of implant concentration at its edges ratherthan a binary change from implanted to non-implanted region. Likewise, aburied region formed by implantation may result in some implantation inthe region between the buried region and the surface through which theimplantation takes place. Thus, the regions illustrated in the figuresare schematic in nature and their shapes are not intended to limit thescope of example embodiments.

As appreciated by the present inventive entity, devices and methods offorming devices according to various embodiments described herein may beembodied in microelectronic devices such as integrated circuits, whereina plurality of devices according to various embodiments described hereinare integrated in the same microelectronic device. Accordingly, thecross-sectional view(s) illustrated herein may be replicated in twodifferent directions, which need not be orthogonal, in themicroelectronic device. Thus, a plan view of the microelectronic devicethat embodies devices according to various embodiments described hereinmay include a plurality of the devices in an array and/or in atwo-dimensional pattern that is based on the functionality of themicroelectronic device.

The devices according to various embodiments described herein may beinterspersed among other devices depending on the functionality of themicroelectronic device. Moreover, microelectronic devices according tovarious embodiments described herein may be replicated in a thirddirection that may be orthogonal to the two different directions, toprovide three-dimensional integrated circuits.

Accordingly, the cross-sectional view(s) illustrated herein providesupport for a plurality of devices according to various embodimentsdescribed herein that extend along two different directions in a planview and/or in three different directions in a perspective view. Forexample, when a single active region is illustrated in a cross-sectionalview of a device/structure, the device/structure may include a pluralityof active regions and transistor structures (or memory cell structures,gate structures, etc., as appropriate to the case) thereon, as would beillustrated by a plan view of the device/structure.

Terms such as “same,” “planar,” or “coplanar,” as used herein whenreferring to orientation, layout, location, shapes, sizes, amounts, orother measures do not necessarily mean an exactly identical orientation,layout, location, shape, size, amount, or other measure, but areintended to encompass nearly identical orientation, layout, location,shapes, sizes, amounts, or other measures within acceptable variationsthat may occur, for example, due to manufacturing processes. The term“substantially” may be used herein to reflect this meaning. The term“about” when used in connection with a numerical value may also be usedto reflect this meaning.

Unless otherwise defined, all terms (including technical and scientificterms) used herein have the same meaning as commonly understood by oneof ordinary skill in the art to which example embodiments of theinventive concepts belong. It will be further understood that terms,such as those defined in commonly-used dictionaries, should beinterpreted as having a meaning that is consistent with their meaning inthe context of the relevant art and will not be interpreted in anidealized or overly formal sense unless expressly so defined herein.

FIGS. 1A through 7A are plan views illustrating a method of fabricatinga semiconductor device 100A according to example embodiments of theinventive concept, and FIGS. 1B through 7B are sectional views takenalong lines I-I′, II-II′, and III-III′ of FIGS. 1A through 7A,respectively.

Referring to FIGS. 1A and 1B, a strain relaxed buffer (SRB) layer 110and a semiconductor layer 120 may be sequentially formed on a substrate101. The substrate 101 may be a silicon-containing semiconductor waferor a silicon-on-insulator (SOI) wafer. The substrate 101 may have afirst conductivity type. The SRB layer 110 and the semiconductor layer120 may also have the first conductivity type.

The SRB layer 110 may be formed by an epitaxial growth process using thesubstrate 101 as a seed layer. As an example, the epitaxial growthprocess may be a chemical vapor deposition (CVD) process or a molecularbeam epitaxy (MBE) process. The SRB layer 110 and the semiconductorlayer 120 may be successively formed in the same chamber. The SRB layer110 and the semiconductor layer 120 may be grown from the entire topsurface of the substrate 101.

The SRB layer 110 and the semiconductor layer 120 may be, for example, asilicon germanium layer. The SRB layer 110 may facilitate a process ofgrowing the semiconductor layer 120 from the substrate 101, which may beformed of silicon. The SRB layer 110 may contain germanium at a lowerconcentration than the semiconductor layer 120. For example, in oneembodiment, the SRB layer 110 may contain germanium at a concentrationof 30 atomic percent (at %) or less. The semiconductor layer 120 maycontain germanium at a concentration of 30 at % or more. In general, inthe case where a germanium concentration of a silicon germanium layer is30 at % or more, it is difficult to directly grow such a silicongermanium layer from a silicon layer. According to example embodimentsof the inventive concept, the SRB layer 110 having a germaniumconcentration of 30 at % or less may be directly grown from thesubstrate 101 that is made of silicon, and then, the semiconductor layer120 of high germanium concentration may be grown from the SRB layer 110serving as a seed layer through an epitaxial growth process.Accordingly, it is possible to grow the semiconductor layer 120 of highquality and high germanium concentration.

Due to the difference in germanium concentration between the SRB layer110 and the semiconductor layer 120, the SRB layer 110 may have an etchselectivity with respect to the semiconductor layer 120. For example,when the SRB layer 110 is etched using a specific etch recipe, the SRBlayer 110 may be etched at a higher etch rate than the semiconductorlayer 120 (for example, with preventing the semiconductor layer 120 frombeing etched). In certain cases, the etch selectivity may be expressedas a ratio of an etch rate of the SRB layer 110 to an etch rate of thesemiconductor layer 120.

Referring to FIGS. 2A and 2B, a first mask pattern may be formed on thesemiconductor layer 120. The first mask pattern may extend along a firstdirection D1. A shape of the first mask pattern may be variously changedfrom the example shown in FIG. 2A. The first mask pattern may include,for example, at least one of a photoresist layer, a silicon nitridelayer, a silicon oxide layer, and a silicon oxynitride layer.

The semiconductor layer 120 may be patterned to form an uppersemiconductor pattern 122 with source/drain regions SD and a channelregion CH. The upper semiconductor pattern 122 may be formed by apatterning process using the first mask pattern as an etch mask. Theupper semiconductor pattern 122 may extend in the first direction D1.The source/drain regions SD and the channel region CH may be formedunder both end portions and a center portion, respectively, of the firstmask pattern. The source/drain regions SD may include source and drainregions spaced apart from each other in the first direction D1. Thechannel region CH may connect the source region to the drain region.During the patterning process, an upper portion of the SRB layer 110 maybe patterned to form a lower semiconductor pattern 112.

The patterning process may include a dry and/or wet etching process. Asan example, the patterning process may be anisotropically performedusing a dry etching technology. After the patterning process, the firstmask pattern may be removed. As an example, the removal process of thefirst mask pattern may include an ashing process or a wet etchingprocess.

Referring to FIGS. 3A, 3B, 4A, and 4B, an insulating pattern 130 may beformed on the upper semiconductor pattern 122. The insulating pattern130 may include an insulating spacer 134 and an interlayered insulatinglayer 136. The insulating pattern 130 may be formed to define a gateregion 135 exposing the channel region CH and extending in a seconddirection D2 or across the first direction D1.

For example, as shown in FIGS. 3A and 3B, a dummy gate 132 may be formedto cover the channel region CH of the upper semiconductor pattern 122.The dummy gate 132 may extend in the second direction D2. The dummy gate132 may be formed to expose the source/drain regions SD of the uppersemiconductor pattern 122. In certain embodiments, the dummy gate 132may be formed of or include a polysilicon layer, a silicon nitridelayer, or a silicon oxynitride layer. Thereafter, the insulating spacer134 may be formed on sidewalls of the dummy gate 132. The insulatingspacer 134 may include a material having an etch selectivity withrespect to the dummy gate 132. As an example, the insulating spacer 134may include at least one of a silicon oxide layer, a silicon nitridelayer, or a silicon oxynitride layer.

The interlayered insulating layer 136 may be formed on the substrate101. The formation of the interlayered insulating layer 136 may include,for example, forming an insulating layer on the substrate 101 using achemical vapor deposition (CVD) process and performing a planarizationprocess on the insulating layer to expose a top surface of the dummygate 132. The interlayered insulating layer 136 may be formed of orinclude a silicon oxide layer.

Impurities may be injected into the source/drain regions SD using thedummy gate 132 and the insulating spacer 134 as a mask, and thus,impurity regions 120N of a second conductivity type may be formed in thesource/drain regions SD. Here, the second conductivity type may bedifferent from the first conductivity type. In certain embodiments, theimpurity regions 120N may extend from the source/drain regions SD of theupper semiconductor pattern 122 into an upper portion of the lowersemiconductor pattern 112.

Referring back to FIGS. 4A and 4B, the dummy gate 132 may be selectivelyremoved to form the gate region 135. Accordingly, the insulating pattern130 including the insulating spacer 134 and the interlayered insulatinglayer 136 may cover the source/drain regions SD of the uppersemiconductor pattern 122 and expose the channel region CH of the uppersemiconductor pattern 122. As such, the channel region CH may be exposedthrough the gate region 135.

Referring to FIGS. 5A and 5B, the lower semiconductor pattern 112 andthe SRB layer 110 exposed by the gate region 135 may be partiallyremoved. The removal process may be performed using a selective etchingprocess capable of selectively removing the SRB layer 110 and preventingthe upper semiconductor pattern 122 from being etched. As an example,the selective etching process may be performed using an etching solutioncontaining nitric acid or hydrogen peroxide. In certain embodiments, theetching solution may further contain hydrofluoric acid (HF). The SRBlayer 110 and the lower semiconductor pattern 112 may contain a higheramount of silicon than the upper semiconductor pattern 122 and thus canbe selectively etched by the etching solution. Accordingly, the SRBlayer 110 and the lower semiconductor pattern 112 exposed by the gateregion 135 may be partially removed to form a gap region GA under thechannel region CH of the upper semiconductor pattern 122.

Referring to FIGS. 6A and 6B, after the formation of the gap region GA,a surface treatment process may be performed on the channel region CH.The surface treatment process may be, for example, a Ge condensationprocess. In one embodiment, the Ge condensation process may include athermal treatment process to be performed at a temperature of about 600°C. or lower. The Ge condensation process may be performed in anoxidizing atmosphere. For example, the Ge condensation process may beperformed in an N₂O ambient. Since silicon is more easily oxidized thangermanium, a surface of the channel region CH made of silicon may beselectively oxidized to form a silicon oxide layer. Accordingly, agermanium concentration may be higher in the channel region CH than inthe source/drain regions SD. For example, in one embodiment, the channelregion CH may contain germanium at a concentration of 60 at % or more,and source/drain regions SD may contain germanium at a concentration of30 at % or more. Further, the germanium concentration may be higher onthe surface of the channel region CH than in an internal portion of thechannel region CH. The silicon oxide layer on the surface of the channelregion CH may be removed using an etching solution containinghydrofluoric acid (HF). The channel region CH may be rounded by thesurface treatment process, and thus, a width of the channel region CHmay become smaller than those of the source/drain regions SD. Forexample, the channel region CH may have a shape of a nano-sized wire.Further, an increase in the germanium concentration of the SRB layer 110caused by the surface treatment process may be greater at an outerportion 111 adjacent to the gap region GA than at an internal portionapart from the gap region GA. Accordingly, the germanium concentrationof the SRB layer 110 may be higher at the outer portion 111 adjacent tothe gap region GA than at the internal portion apart from the gap regionGA. In addition, an increase in the germanium concentration of thesource/drain regions SD may be greater at portions 123 adjacent to thegap region GA than at other portions apart from the gap region GA, andthus, the portions 123 adjacent to the gap region GA may have a highergermanium concentration than the other portions apart from the gapregion GA.

Referring to FIGS. 7A and 7B, a gate electrode 140 may be formed in thegate region 135. The gate electrode 140 may extend parallel to thesecond direction, which may be substantially perpendicular to anextension direction of the upper semiconductor pattern 122. The gateelectrode 140 may be formed to cover top and side surfaces of the uppersemiconductor pattern 122. Further, the gate electrode 140 may extendinto the gap region GA to cover a bottom surface of the uppersemiconductor pattern 122. Therefore, the gate electrode 140 may beformed to enclose the channel region CH. The gate electrode 140 mayinclude at least one of a doped silicon layer, conductive metal nitridelayers, or metal layers.

Before the formation of the gate electrode 140, a gate insulating layer142 may be formed between the gate region 135 and the gate electrode140. The gate insulating layer 142 may be interposed between the gateelectrode 140 and the insulating spacer 134 and between the gateelectrode 140 and the SRB layer 110. The gate insulating layer 142 mayinclude a silicon oxide layer. In other example embodiments, the gateinsulating layer 142 may include a high-k dielectric material, whosedielectric constant is higher than that of the silicon oxide layer. Forexample, the gate insulating layer 142 may include at least one of HfO₂,ZrO₂, or Ta₂O₅.

Hereinafter, the semiconductor device 100A according to exampleembodiments of the inventive concept will be described with reference toFIGS. 7A and 7B. The semiconductor device 100A may include the SRB layer110 on the substrate 101, the upper semiconductor pattern 122, which isprovided on the SRB layer 110 and includes a pair of source/drainregions SD and the channel region CH connecting the pair of source/drainregions SD, and the gate electrode 140 enclosing the channel region CH.According to example embodiments of the inventive concept, thesource/drain regions SD, the channel region CH, and the gate electrode140 may constitute a transistor TR of the semiconductor device 100A.

The substrate 101 may be a silicon-containing semiconductor wafer or asilicon-on-insulator (SOI) wafer. The substrate 101 may have the firstconductivity type. The SRB layer 110 may be a silicon germanium layer,whose germanium concentration is 30 at % or less. The SRB layer 110 maybe provided to define the gap region GA adjacent to the channel regionCH. The germanium concentration of the SRB layer 110 may be higher at aportion 111 adjacent to the gap region GA than at other portions apartfrom the gap region GA.

The upper semiconductor pattern 122 may extend in the first directionD1. The source/drain regions SD may be a silicon germanium layer, whosegermanium concentration is 30 at % or more. The channel region CH may bea silicon germanium layer, whose germanium concentration is higher thanthat of the source/drain regions SD. For example, the channel region CHmay be a silicon germanium layer, whose germanium concentration is 60 at% or more. The germanium concentration may be higher on the surface ofthe channel region CH than in an internal portion of the channel regionCH. The channel region CH may have a smaller width than the source/drainregions SD. For example, the channel region CH may have a shape of anano-sized wire. The germanium concentration of the source/drain regionsSD may be higher at portions 123 adjacent to the gap region GA than atother portions apart from the gap region GA.

The lower semiconductor pattern 112 below each of the source/drainregions SD may be provided between the SRB layer 110 and the uppersemiconductor pattern 122. The lower semiconductor pattern 112 mayinclude the same material as the SRB layer 110. The lower semiconductorpattern 112 may have a sidewall aligned with that of the uppersemiconductor pattern 122.

The impurity regions 120N with the second conductivity type may beformed in the source/drain regions SD of the upper semiconductor pattern122. The impurity regions 120N may extend into the lower semiconductorpattern 112.

The gate electrode 140 may extend parallel to the second direction D2,which may be substantially perpendicular to an extension direction ofthe upper semiconductor pattern 122. The gate electrode 140 may beprovided to enclose the channel region CH. The channel region CH may beprovided to penetrate the gate electrode 140. The gate electrode 140 mayextend into the gap region GA or below the channel region CH. The gateelectrode 140 may include at least one of a doped silicon layer,conductive metal nitride layers, or metal layers.

The interlayered insulating layer 136 may be provided on the uppersemiconductor pattern 122 at both sides of the gate electrode 140. Theinsulating spacer 134 may be provided between the gate electrode 140 andthe interlayered insulating layer 136. The interlayered insulating layer136 and the insulating spacer 134 may constitute the insulating pattern130.

The gate insulating layer 142 may be provided between the gate electrode140 and the channel region CH. The gate insulating layer 142 may beinterposed between the gate electrode 140 and the insulating spacer 134and between the gate electrode 140 and the SRB layer 110. The gateinsulating layer 142 may include a silicon oxide layer. In other exampleembodiments, the gate insulating layer 142 may include a high-kdielectric material, whose dielectric constant is higher than that ofthe silicon oxide layer. As an example, the gate insulating layer 142may include at least one of HfO₂, ZrO₂, or Ta₂O₅.

The transistor TR may be formed to have a gate-all-around structure. Asan example, the channel region CH may be a nano wire structure having awidth ranging from several nanometers to several ten nanometers. Such astructure of the channel region CH may contribute to prevent a shortchannel effect from occurring in the transistor TR. According to theconventional technology, a transistor TR with a nano-sized channel maysuffer from a low driving current. By contrast, according to exampleembodiments of the inventive concept, since the channel region CHcontains germanium at a high concentration (for example, 60 at % ormore), it is possible to increase mobility of electric charges passingthrough the channel region CH. Accordingly, even when the transistor TRhas the nano-sized channel, the transistor TR can have a property oflarge driving current.

FIGS. 8A through 12A are plan views illustrating a method of fabricatinga semiconductor device 100B according to other example embodiments ofthe inventive concept, and FIGS. 8B through 12B are sectional viewstaken along lines I-I′, II-II′, and III-III′ of FIGS. 8A through 12A,respectively.

Referring to FIGS. 8A and 8B, a plurality of strain relaxed buffer (SRB)layers 110 and a plurality of semiconductor layers 120 may bealternatingly stacked on the substrate 101 using, for example, themethod described with reference to FIGS. 1A and 1B.

Referring to FIGS. 9A and 9B, the semiconductor layers 120 and the SRBlayer 110 may be patterned to form upper semiconductor patterns 122 andlower semiconductor patterns 112. The upper and lower semiconductorpatterns 122 and 112 may be formed by a patterning process using asecond mask pattern as an etch mask, and here, the second mask patternmay include at least one of a photoresist layer, a silicon nitridelayer, a silicon oxide layer, or a silicon oxynitride layer. Each of theupper semiconductor patterns 122 may include the source/drain regions SDand the channel region CH therebetween. The lower semiconductor pattern112 may be formed between the SRB layer 110 and the lowermost one of theupper semiconductor patterns 122. Thereafter, the second mask patternmay be removed.

Referring to FIGS. 10A, 10B, 11A, and 11B, the insulating pattern 130may be formed on the upper semiconductor patterns 122. The insulatingpattern 130 may include the insulating spacer 134 and the interlayeredinsulating layer 136. The insulating pattern 130 may be formed to definethe gate region 135 exposing the channel regions CH and extending in thesecond direction D2 or across the first direction D1. The insulatingpattern 130 may cover the source/drain regions SD of the uppersemiconductor patterns 122.

For example, by using the method described with reference to FIGS. 3Aand 3B, the dummy gate 132 may be formed to cover the channel region CHof the upper semiconductor pattern 122. The dummy gate 132 may extend inthe second direction D2. The dummy gate 132 may be formed to expose thesource/drain regions SD of the upper semiconductor pattern 122. Thedummy gate 132 may be formed of or include a polysilicon layer, asilicon nitride layer, or a silicon oxynitride layer. Thereafter, theinsulating spacer 134 may be formed on sidewalls of the dummy gate 132.The insulating spacer 134 may include a material having an etchselectivity with respect to the dummy gate 132. As an example, theinsulating spacer 134 may include at least one of a silicon oxide layer,a silicon nitride layer, or a silicon oxynitride layer.

Impurities may be injected into the source/drain regions SD using thedummy gate 132 and the insulating spacer 134 as a mask, and thus, theimpurity regions 120N of the second conductivity type may be formed inthe source/drain regions SD. The impurity regions 120N may extend fromthe source/drain regions SD of the upper semiconductor pattern 122 intoan upper portion of the lower semiconductor pattern 112.

Referring back to FIGS. 11A and 11B, the lower semiconductor patterns112 may be partially removed to form the gap region GA between or aroundthe channel regions CH of the upper semiconductor patterns 122. Theremoval of the lower semiconductor patterns 112 may be performed using,for example, the same or similar method as described with reference toFIGS. 5A and 5B or its modification. The gap region GA may be formed toexpose top and bottom surfaces of the channel regions CH of the uppersemiconductor patterns 122.

Referring to FIGS. 12A and 12B, after the formation of the gap regionGA, a surface treatment process may be performed on the channel regionsCH. The surface treatment process may be a Ge condensation process. Thegate electrode 140 may be formed in the gate region 135 using, forexample, the previously described method of the previous embodiment.

According to other example embodiments of the inventive concept, asshown in FIGS. 12A and 12B, the transistor of the semiconductor device100B may include a plurality of the upper semiconductor patterns 122.This makes it possible to increase a total area of the channel region ofthe transistor and increase a mobility of electric charges passingtherethrough.

FIGS. 13A through 19A are plan views illustrating a method offabricating a semiconductor device 100C according to still other exampleembodiments of the inventive concept. FIGS. 13B through 19B aresectional views taken along lines I-I′, II-II′, and III-III′ of FIGS.13A through 19A, respectively, and FIGS. 13C through 19C are sectionalviews taken along lines IV-IV′, V-V′, and VI-VI′ of FIGS. 13A through19A.

Referring to FIGS. 13A and 13B, the substrate 101 may be provided. Thesubstrate 101 may include a first region R1 and a second region R2. Inan embodiment, the first region R1 may be a PMOS region, and the secondregion R2 may be an NMOS region. The substrate 101 may be asilicon-containing semiconductor wafer or a silicon-on-insulator (SOI)wafer. The substrate 101 may have a first conductivity type.

The SRB layer 110 may be formed on the substrate 101 using, for example,the method described with reference to FIGS. 1A and 1B. The SRB layer110 may be formed by an epitaxial growth process using the substrate 101as a seed layer. For example, the epitaxial growth process for formingthe SRB layer 110 may be a chemical vapor deposition (CVD) process or amolecular beam epitaxy (MBE) process. A first semiconductor layer 120 amay be formed on the SRB layer 110. The first semiconductor layer 120 amay be formed by an epitaxial growth process using the SRB layer 110 asa seed layer. For example, the epitaxial growth process for forming thefirst semiconductor layer 120 a may be a chemical vapor deposition (CVD)process or a molecular beam epitaxy (MBE). The SRB layer 110 and thefirst semiconductor layer 120 a may be successively formed in the samechamber.

The SRB layer 110 and the first semiconductor layer 120 a may be, forexample, a silicon germanium layer. The SRB layer 110 may facilitate aprocess of growing the first semiconductor layer 120 a from thesubstrate 101, which may be formed of silicon. The SRB layer 110 maycontain germanium at a lower concentration than the first semiconductorlayer 120 a. In one embodiment, the SRB layer 110 may contain germaniumat a concentration of 30 at % or less. The first semiconductor layer 120a may contain germanium at a concentration of 30 at % or more. Ingeneral, in the case where a germanium concentration of a silicongermanium layer is 30 at % or more, it is a difficult to directly growsuch a silicon germanium layer from a silicon layer. In one embodiment,the SRB layer 110 having a germanium concentration of 30 at % or lessmay be directly grown from the substrate 101 that is made of silicon,and then, the first semiconductor layer 120 a of high germaniumconcentration may be grown from the SRB layer 110 serving as a seedlayer. Accordingly, it is possible to grow the first semiconductor layer120 a of high quality and high germanium concentration.

Thereafter, a third mask pattern may be formed to cover the first regionR1. The first semiconductor layer 120 a of the second region R2 may beremoved using the third mask pattern as an etch mask. The third maskpattern may include at least one of a silicon nitride layer, a siliconoxide layer, or a silicon oxynitride layer. The removal of the firstsemiconductor layer 120 a may be performed using a selective etchingprocess capable of selectively removing the first semiconductor layer120 a and preventing the SRB layer 110 from being etched. The etchingprocess may be performed using an etching solution containing peraceticacid. The etching solution may further contain hydrofluoric acid (HF)aqueous solution and deionized water. Accordingly, the SRB layer 110 maybe exposed on the second region R2.

When the first region R1 is covered with the third mask pattern, asecond semiconductor layer 120 b may be locally formed on the secondregion R2 to cover the SRB layer 110. The second semiconductor layer 120b may be formed by an epitaxial growth process using the SRB layer 110as a seed layer. For example, the epitaxial growth process for formingthe second semiconductor layer 120 b may be a chemical vapor deposition(CVD) process or a molecular beam epitaxy (MBE) process. The secondsemiconductor layer 120 b may be formed to contain germanium at a lowerconcentration than the SRB layer 110. The second semiconductor layer 120b may be, for example, a silicon layer. The third mask pattern may beremoved.

Referring to FIGS. 14A and 14B, fourth mask patterns may be formed onthe first and second semiconductor layers 120 a and 120 b. Each of thefourth mask patterns may extend in the first direction. The fourth maskpatterns may include at least one of a photoresist layer, a siliconnitride layer, a silicon oxide layer, or a silicon oxynitride layer.

The first and second semiconductor layers 120 a and 120 b may bepatterned to form a first upper semiconductor pattern 122 a and a secondupper semiconductor pattern 122 b on the first region R1 and the secondregion R2, respectively. The first and second upper semiconductorpatterns 122 a and 122 b may be formed by a patterning process using thefourth mask patterns as an etch mask. The first upper semiconductorpattern 122 a may include first source/drain regions SD1 and a firstchannel region CH1. The first source/drain regions SD1 may include afirst source region and a first drain region spaced apart from eachother in the first direction. The first channel region CH1 may connectthe first source region to the first drain region. The second uppersemiconductor pattern 122 b may include second source/drain regions SD2and a second channel region CH2. The second source/drain regions SD2 mayinclude a second source region and a second drain region spaced apartfrom each other in the first direction. The second channel region CH2may connect the second source region to the second drain region. Here,an upper portion of the SRB layer 110 may be patterned to form a firstlower semiconductor pattern 112 a and a second lower semiconductorpattern 112 b on the first region R1 and the second region R2,respectively.

The patterning process may include a dry and/or wet etching process. Asan example, the patterning process may be anisotropically performedusing a dry etching technology. The fourth mask pattern may be removedafter the patterning process. In example embodiments, the removal of thefourth mask patterns may include an ashing process or a wet etchingprocess.

Referring to FIGS. 15A and 15B, dummy gates 132 may be formed to coverthe first channel region CH1 of the first upper semiconductor pattern122 a and the second channel region CH2 of the second uppersemiconductor pattern 122 b. The dummy gates 132 may extend in thesecond direction or across the first direction. The dummy gates 132 maybe formed to expose the first source/drain regions SD1 and the secondsource/drain regions SD2. The dummy gates 132 may include, for example,at least one of a polysilicon layer, a silicon nitride layer, or asilicon oxynitride layer. The insulating spacer 134 may be formed onsidewalls of the dummy gates 132. The insulating spacer 134 may includea material having an etch selectivity with respect to the dummy gates132. For example, the insulating spacer 134 may include at least one ofa silicon oxide layer, a silicon nitride layer, or a silicon oxynitridelayer.

A first mask may be formed to cover the second region R2. Impurities maybe injected into the first source/drain regions SD1 using the dummy gate132 and the insulating spacer 134 as an ion mask, and thus, firstimpurity regions 120P of the first conductivity type may be formed inthe first source/drain regions SD1. The first impurity regions 120P mayextend from the first source/drain regions SD1 of the first uppersemiconductor pattern 122 a into the first lower semiconductor pattern112 a. Next, the first mask may be removed, and a second mask may beformed to cover the first region R1. Impurities may be injected into thesecond source/drain regions SD2 using the dummy gate 132 and theinsulating spacer 134 as an ion mask, and thus, second impurity regions120N of the second conductivity type may be formed in the secondsource/drain regions SD2. Here, the second conductivity type may bedifferent from the first conductivity type. The second impurity regions120N may extend from the second source/drain regions SD2 of the secondupper semiconductor pattern 122 b into the second lower semiconductorpattern 112 b.

The interlayered insulating layer 136 may be formed on the substrate101. The formation of the interlayered insulating layer 136 may includeforming an insulating layer on the substrate 101 using a chemical vapordeposition (CVD) process and performing a planarization process on theinsulating layer to expose top surfaces of the dummy gates 132. Forexample, the interlayered insulating layer 136 may be formed of orinclude a silicon oxide layer. The insulating spacer 134 and theinterlayered insulating layer 136 may constitute the insulating pattern130.

Referring to FIGS. 16A and 16B, the dummy gates 132 may be selectivelyremoved to form a first gate region 135 a and a second gate region 135 bon the first region R1 and the second region R2, respectively.Accordingly, the insulating spacer 134 and the interlayered insulatinglayer 136 may expose the first and second channel regions CH1 and CH2.Therefore, the first and second channel regions CH1 and CH2 may beexposed by the first and second gate regions 135 a and 135 b,respectively.

Next, a fifth mask pattern 133 may be formed on the second gate region135 b. The fifth mask pattern 133 may include a material having an etchselectivity with respect to the interlayered insulating layer 136, theinsulating spacer 134, and the first and second upper semiconductorpatterns 122 a and 122 b. As an example, the fifth mask pattern 133 mayinclude at least one of silicon oxide, silicon nitride, and siliconoxynitride. Alternatively, the dummy gate 132 may not be removed fromthe second region R2. As such, in one embodiment, the dummy gate 132 mayremain on the second region R2.

Referring to FIGS. 17A and 17B, the first lower semiconductor pattern112 a and a portion of the SRB layer 110 exposed by the first gateregion 135 a may be removed. The removal process may be performed usinga selective etching process capable of selectively etching the SRB layer110 and preventing the first upper semiconductor pattern 122 a frombeing etched. As an example, the selective etching process may beperformed using an etching solution containing nitric acid or hydrogenperoxide. In certain embodiments, the etching solution may furthercontain hydrofluoric acid (HF). The first lower semiconductor pattern112 a and the SRB layer 110 may contain a higher amount of silicon thanthe second upper semiconductor pattern 122 b. In this case, the firstlower semiconductor pattern 112 a and the SRB layer 110 may beselectively etched by the etching solution. Accordingly, the first lowersemiconductor pattern 112 a and the portion of the SRB layer 110 exposedby the first gate region 135 a may be removed to form the gap region GAunder the first channel region CH1 of the first upper semiconductorpattern 122 a.

Referring to FIGS. 18A and 18B, after the formation of the gap regionGA, a surface treatment process may be performed on the first channelregion CH1. The surface treatment process may be a Ge condensationprocess. The Ge condensation process may include a thermal treatmentprocess to be performed at a temperature of about 600° C. or less. TheGe condensation process may be performed in an oxidizing atmosphere. Forexample, The Ge condensation process may be performed in an N₂O ambient.Since silicon is more easily oxidized than germanium, a silicon surfaceof the channel region CH may be selectively oxidized to form a siliconoxide layer. Accordingly, an increase in concentration of germanium maybe higher in the first channel region CH1 than in the first source/drainregions SD1. Thus, the germanium concentration may be higher in thefirst channel region CH1 than in the first source/drain regions SD1. Inone embodiment, the first channel region CH1 may contain germanium at aconcentration of 60 at % or more. The silicon oxide layer on the firstchannel region CH1 may be removed by an etching solution containinghydrofluoric acid (HF). The first channel region CH1 may be rounded bythe surface treatment process, and thus, a width of the first channelregion CH1 may become smaller than those of the first source/drainregions SD1. Accordingly, the first channel region CH1 may have a shapeof a nano-sized wire. Further, an increase in the germaniumconcentration of the SRB layer 110 caused by the surface treatmentprocess may be greater at an outer portion 111 adjacent to the gapregion GA than at an internal portion apart from the gap region GA. Inaddition, an increase in the germanium concentration of the firstsource/drain regions SD1 may be greater at portions 123 adjacent to thegap region GA than at other portions apart from the gap region GA, andthus, the portions 123 adjacent to the gap region GA may have a highergermanium concentration than the other portions apart from the gapregion GA.

Referring to FIGS. 19A and 19B, the fifth mask pattern 133 may beselectively removed from the second region R2 to expose the second gateregion 135 b. First and second gate electrodes 140 a and 140 b may beformed in the first and second gate regions 135 a and 135 b,respectively. The first and second gate electrodes 140 a and 140 b mayextend parallel to the second direction, which may be substantiallyperpendicular to an extension direction of the first and second uppersemiconductor patterns 122 a and 122 b, respectively. For example, thefirst and second gate electrodes 140 a and 140 b may extend alongsidewalls of the first and second upper semiconductor patterns 122 a and122 b, respectively. The first gate electrode 140 a may extend into thegap region GA to cover a bottom surface of the first upper semiconductorpattern 122 a. The first gate electrode 140 a may be formed to enclosethe first channel region CH1 of the first upper semiconductor pattern122 a. The first and second gate electrodes 140 a and 140 b may includeat least one of a doped silicon layer, conductive metal nitride layers,and metal layers.

Before the formation of the first and second gate electrodes 140 a and140 b, first and second gate insulating layers 142 a and 142 b may beformed between the first and second gate regions 135 a and 135 b and thefirst and second gate electrodes 140 a and 140 b. The first and secondgate insulating layers 142 a and 142 b may be interposed between thefirst and second gate electrodes 140 a and 140 b and the insulatingspacer 134 and between the first and second gate electrodes 140 a and140 b and the SRB layer 110. The first and second gate insulating layers142 a and 142 b may include a silicon oxide layer. In certainembodiments, the first and second gate insulating layers 142 a and 142 bmay include a high-k dielectric material, whose dielectric constant ishigher than that of the silicon oxide layer. As an example, the firstand second gate insulating layers 142 a and 142 b may include at leastone of HfO₂, ZrO₂ or Ta₂O₅.

Hereinafter, a semiconductor device 100B according to still otherexample embodiments of the inventive concept will be described withreference to FIGS. 19A and 19B. The semiconductor device 100C mayinclude a first transistor TR1 and a second transistor TR2 provided onthe first region R1 and the second region R2, respectively. The firsttransistor TR1 and the second transistor TR2 may be integrated on thesubstrate 101. The first transistor TR1 and the second transistor TR2may be a PMOS and an NMOS, respectively. The SRB layer 110 may beprovided between the substrate 101 and first and second transistors TR1and TR2.

The substrate 101 may be a silicon-containing semiconductor wafer or asilicon-on-insulator (SOI) wafer. The substrate 101 may have a firstconductivity type. In one embodiment, the SRB layer 110 may be a silicongermanium layer, whose germanium concentration is 30 at % or less.

The first transistor TR1 may include the first gate electrode 140 a andthe first channel region CH1, which is spaced apart from the SRB layer110 with the first gate insulating layer 142 a interposed therebetween.The first channel region CH1 may have a rounded profile. In certainembodiments, the first channel region CH1 may have a section that isshaped like a rectangle, ellipse, or circle, but example embodiments ofthe inventive concepts are not limited thereto. The first gateinsulating layer 142 a and the first gate electrode 140 a may besequentially provided on the first channel region CH1. The first gateinsulating layer 142 a and the first gate electrode 140 a may extendinto the gap region GA between the first upper semiconductor pattern 122a and the SRB layer 110. For example, the first gate insulating layer142 a and the first gate electrode 140 a may cover top, bottom, and sidesurfaces of the first channel region CH1. The first gate insulatinglayer 142 a and the first gate electrode 140 a may be provided toenclose a circumference of the first channel region CH1, and the firstchannel region CH1 may be provided to penetrate the first gate electrode140 a. The first channel region CH1 may be a silicon germanium layer. Inone embodiment, the first channel region CH1 may contain germanium at aconcentration of 60 at % or more.

The first transistor TR1 may further include the first source/drainregions SD1 that are spaced apart from each other in the first directionwith the first channel region CH1 interposed therebetween. The firstchannel region CH1 may have a width that is smaller than those of thefirst source/drain regions SD1. The first source/drain regions SD1 maybe, for example, a silicon germanium layer. In one embodiment, the firstsource/drain regions SD1 may contain germanium at a concentration of 30at % or more. The impurity regions 120P may be formed in the firstsource/drain regions SD1 to have the first conductivity type. The firstimpurity regions 120P may extend the first source/drain regions SD1 ofthe first upper semiconductor pattern 122 a into the first lowersemiconductor pattern 112 a.

The first gate insulating layer 142 a may include, for example, asilicon oxide layer. The first gate insulating layer 142 a may include,for example, a high-k dielectric material, whose dielectric constant ishigher than that of the silicon oxide layer. As an example, the firstgate insulating layer 142 a may include at least one of HfO₂, ZrO₂ orTa₂O₅. The first gate electrode 140 a may include at least one of dopedsilicon, conductive metal nitrides, or metals.

The first transistor TR1 may be formed to have a gate-all-aroundstructure. As an example, the first channel region CH1 may be a nanowire or nanotube structure having a width ranging from severalnanometers to several ten nanometers. Such a structure of the firstchannel region CH1 may contribute to prevent a short channel effect fromoccurring in the first transistor TR1. Since all of the top, bottom, andside surface of the first channel region CH1 are used as a channelregion of the first transistor TR1, the first transistor TR1 can have anincreased channel width. In general, one way to increase an integrationdensity of a semiconductor device is to reduce a channel width of atransistor. In this case, the transistor may suffer from a narrowchannel effect. According to still other example embodiments of theinventive concept, since the first channel region CH1 has thegate-all-around structure, it is possible to relieve short and narrowchannel effects of the transistor. According to the conventional art, inthe case where the first transistor TR1 has a nano-sized channel, itsuffers from low driving current. By contrast, according to still otherexample embodiments of the inventive concept, since the first channelregion CH1 contains germanium of high concentration (e.g., of 60 at % ormore), it is possible to increase mobility of an electric currentpassing therethrough. Accordingly, even when the transistor has anano-sized channel, the transistor can have a large driving currentproperty.

In the first region R1, the SRB layer 110 may be provided to define thegap region GA adjacent to the first channel region CH1. The germaniumconcentration of the SRB layer 110 may be higher at a portion 111adjacent to the gap region GA than at other portions apart from the gapregion GA. In addition, the germanium concentration of the source/drainregions SD may be higher at portions 123 adjacent to the gap region GAthan at other portions apart from the gap region GA.

The second transistor TR2 may include a fin-shaped portion FN protrudingfrom the substrate 101 in a third direction crossing both of the firstand second directions (for example, normal to a top or main surface ofthe substrate). The fin-shaped portion FN may include the second channelregion CH2 and the second source/drain regions SD2, which are disposedspaced apart from each other in the first direction with the secondchannel region CH2 interposed therebetween. The fin-shaped portion FNmay include the second lower semiconductor pattern 112 b and the secondupper semiconductor pattern 122 b that are sequentially stacked on thesubstrate 101. The second lower semiconductor pattern 112 b may be aportion of the SRB layer 110 protruding toward the second uppersemiconductor pattern 122 b. The second upper semiconductor pattern 122b may be a silicon pattern.

The impurity regions 120N with the second conductivity type may beformed in the second source/drain regions SD2. The second impurityregions 120N may extend from the second source/drain regions SD2 of thesecond upper semiconductor pattern 122 b into the second lowersemiconductor pattern 112 b.

The second gate insulating layer 142 b and the second gate electrode 140b may be sequentially provided on the second channel region CH2. Thesecond gate insulating layer 142 b and the second gate electrode 140 bmay extend along side and top surfaces of the second channel region CH2.The second gate insulating layer 142 b may include a silicon oxidelayer. In certain embodiments, the second gate insulating layer 142 bmay include a high-k dielectric material, whose dielectric constant ishigher than that of the silicon oxide layer. As an example, the secondgate insulating layer 142 b may include at least one of HfO₂, ZrO₂ orTa₂O₅. The second gate electrode 140 b may include at least one of dopedsilicon, conductive metal nitrides, or metals.

The second gate electrode 140 b may be formed of or include a materialhaving a different work function from that of the first gate electrode140 a. The first and second gate electrodes 140 a and 140 b may beformed of or include an aluminum-containing metal layer (e.g., TaAl,TaAl, TaAlC, or TaAlC). An aluminum concentration of the first gateelectrode 140 a may be smaller than that of the second gate electrode140 b. For example, the first gate electrode 140 a may have an aluminumconcentration of 50 at % or less, and the second gate electrode 140 bmay have an aluminum concentration of 50 at % or more. In certainembodiments, the first and second gate electrodes 140 a and 140 b mayfurther include a tungsten layer provided on the metal layer.

The second channel region CH2 may be connected to the substrate 101 viathe SRB layer 110. Accordingly, a channel region of the secondtransistor TR2 may be electrically connected to a body (for example, thesubstrate 101). Such a body contact structure of the second transistorTR2 makes it possible to suppress a hot-carrier effect, which may occurwhen the second transistor TR2 is operated. In general, to increase anintegration density of a semiconductor device, it is necessary to reducea channel length of a transistor. However, the reduction of the channellength may lead to an increase in maximum magnitude of an electric fieldto be applied to electric carriers near a drain junction, and thus, theelectric carriers may have a high enough kinetic energy to cause animpact ionization; that is, hot carriers may be produced. The hotcarriers may produce secondary electron-hole pairs, which may result indeterioration in the electrical characteristics of the transistor. Inembodiments of the present inventive concepts, since the second channelregion CH2 is electrically connected to the substrate 101, chargesproduced by the hot carriers can be easily discharged to the substrate101.

Accordingly, the semiconductor device according to still other exampleembodiments of the inventive concept makes it possible to realize a CMOSdevice of high performance.

FIG. 20 is a schematic block diagram illustrating an example ofelectronic systems including a semiconductor device according to exampleembodiments of the inventive concept.

As used herein, a semiconductor device may refer to any of the variousdevices such as shown in the various figures and described above, andmay also refer, for example, to a semiconductor chip (e.g., memory chipand/or logic chip formed on a die), a stack of semiconductor chips, asemiconductor package including one or more semiconductor chips stackedon a package substrate, or a package-on-package device including aplurality of packages. These devices may be formed using ball gridarrays, wire bonding, through substrate vias, or other electricalconnection elements, and may include memory devices such as volatile ornon-volatile memory devices.

An electronic device, as used herein, may refer to these semiconductordevices, but may additionally include products that include thesedevices, such as a memory module, memory card, hard drive includingadditional components, or a mobile phone, laptop, tablet, desktop,camera, or other consumer electronic device, etc.

Referring to FIG. 20, an electronic system 1100 may include a controller1110, an input-output (I/O) unit 1120, a memory device 1130, aninterface 1140, and a bus 1150. The controller 1110, the input-outputunit 1120, the memory device 1130 and/or the interface 1140 may beconnected or coupled to each other via the bus 1150 serving as a pathwayfor data communication.

The controller 1110 may include, e.g., at least one of a microprocessor,a digital signal processor, a microcontroller, or another logic device.The other logic device may have a similar function to any one of themicroprocessor, the digital signal processor, and the microcontroller.The input-output unit 1120 may include a keypad, keyboard, a displaydevice, and so forth. The memory device 1130 may be configured to storedata and/or command. The interface unit 1140 may transmit electricaldata to a communication network or may receive electrical data from acommunication network. The interface unit 1140 may operate by wirelessor cable. For example, the interface unit 1140 may include an antennafor wireless communication or a transceiver for cable communication.Although not shown in the drawings, the electronic system 1100 mayfurther include a fast DRAM device and/or a fast SRAM device which actsas a cache memory for improving an operation of the controller 1110. Asemiconductor device according to example embodiments of the inventiveconcept may be provided, for example, in the memory device 1130 or as apart of the controller 1110 and/or the I/O unit 1120.

The electronic system 1100 may be applied to, for example, a personaldigital assistant (PDA), a portable computer, a web tablet, a wirelessphone, a mobile phone, a digital music player, a memory card, or otherelectronic products. The other electronic products may receive ortransmit information data by wired or wireless communication.

FIG. 21 is a schematic view illustrating an example of variouselectronic devices, to which the electronic system 1100 of FIG. 20 canbe applied. As shown in FIG. 21, the electronic system 1100 of FIG. 20can be applied to realize a mobile phone 800. However, it will beunderstood that, in other embodiments, the electronic system 1100 ofFIG. 20 may be applied to portable notebook computers, MP3 players,navigators, solid state disks (SSDs), automobiles, and/or householdappliances.

According to example embodiments of the inventive concept, it ispossible to easily realize a semiconductor device with a nano wirecontaining germanium at a high concentration.

For example, example embodiments of the inventive concept provide asemiconductor device including a gate-all-around (GAA) field effecttransistor and a method of fabricating the same. The GAA field effecttransistor may include a channel region that is provided in the form ofa nano wire, whose width ranges from several nanometers to several tensof nanometers. Such a structure of the channel region may contribute toprevent a short or narrow channel effect from occurring in thetransistor. Further, according to example embodiments of the inventiveconcept, since the channel region contains germanium at a highconcentration, it is possible to increase mobility of electric chargespassing through the channel region. Accordingly, even when thetransistor has the nano-sized channel region, the transistor can have aproperty of large driving current.

While example embodiments of the inventive concepts have beenparticularly shown and described, it will be understood by one ofordinary skill in the art that variations in form and detail may be madetherein without departing from the spirit and scope of the attachedclaims.

What is claimed is:
 1. A semiconductor device, comprising: a strainrelaxed buffer layer provided on a substrate, the strain relaxed bufferlayer comprising silicon germanium; a semiconductor pattern provided onthe strain relaxed buffer layer, the semiconductor pattern comprising asource region, a drain region, and a channel region connecting thesource region to the drain region; and a gate electrode enclosing thechannel region and extending between the substrate and the channelregion, wherein the source and drain regions comprise germanium at aconcentration of 30 atomic percent (at %) or more.
 2. The semiconductordevice of claim 1, wherein the strain relaxed buffer layer comprisesgermanium at a concentration of 30 at % or less.
 3. The semiconductordevice of claim 1, wherein the channel region comprises germanium at aconcentration of 60 at % or more.
 4. The semiconductor device of claim1, wherein the strain relaxed buffer layer has a recessed regionadjacent to the channel region, and the gate electrode extends into therecessed region.
 5. The semiconductor device of claim 4, wherein agermanium concentration of the strain relaxed buffer layer is higher ata portion adjacent to the recessed region than at another portionadjacent to the source and drain regions.
 6. The semiconductor device ofclaim 1, wherein the strain relaxed buffer layer comprises a pluralityof buffer layers stacked on the substrate, and the semiconductor patterncomprises a plurality of semiconductor layers stacked on the substrate,wherein the buffer layers and the semiconductor layers are alternatinglystacked one on top of one another.
 7. A semiconductor device,comprising: a substrate including a first region and a second region; astrain relaxed buffer layer provided on the substrate, the strainrelaxed buffer layer comprising silicon germanium; a first transistorprovided on the strain relaxed buffer layer of the first region, thefirst transistor including a first channel region protruding from thesubstrate and a first gate electrode covering a side surface of thefirst channel region; and a second transistor provided on the strainrelaxed buffer layer of the second region, the second transistorincluding a second channel region and a second gate electrode enclosingthe second channel region and extending between the substrate and thesecond channel region, wherein the first and second channel regionscomprise silicon, and a germanium concentration of the second channelregion is higher than that of the first channel region.
 8. Thesemiconductor device of claim 7, wherein the first channel includes asilicon layer and the second channel includes a silicon germanium layer.9. The semiconductor device of claim 8, wherein the second transistorfurther includes source/drain region at both sides of the secondchannel, and the source/drain region include a silicon germanium layerand the source/drain region has a germanium concentration that is higherthan that of the strain relaxed buffer layer.
 10. The semiconductordevice of claim 8, wherein the source/drain region comprises germaniumat a concentration of 30 at % or more.
 11. The semiconductor device ofclaim 7, wherein the first and second gate electrodes comprise analuminum-containing metal layer.
 12. The semiconductor device of claim11, wherein an aluminum concentration of the first gate electrode ishigher than that of the second gate electrode.
 13. The semiconductordevice of claim 11, wherein the first and second gate electrodes furthercomprise a tungsten layer provided on the metal layer.
 14. Thesemiconductor device of claim 11, wherein the first transistor comprisesan NMOS transistor and the second transistor comprises a PMOStransistor.
 15. A method of fabricating a semiconductor device, themethod comprising: forming a strain relaxed buffer layer comprisingsilicon germanium, on a substrate; forming a semiconductor pattern onthe strain relaxed buffer layer, the semiconductor pattern including achannel region and source/drain regions at both sides of the channelregion; recessing an upper portion of the strain relaxed buffer layerusing an insulating pattern covering the source/drain regions;selectively removing a portion of the strain relaxed buffer layerpositioned below the channel region to form a gap region; and forming agate electrode to enclose the channel region of the semiconductorpattern, wherein the semiconductor pattern comprises germanium at aconcentration of 30 at % or more.
 16. The method of claim 15, whereinthe strain relaxed buffer layer comprises germanium at a concentrationof 30 at % or less.
 17. The method of claim 16, further comprising,after the forming of the gap region, performing a surface treatmentprocess to round a surface of the channel region.
 18. The method ofclaim 17, wherein the surface treatment process includes a thermaltreatment process in an oxidizing atmosphere.
 19. The method of claim18, wherein the surface treatment process is performed to result in thechannel region having a higher germanium concentration than that of thesource/drain regions.
 20. The device of claim 19, wherein the channelregion is formed to comprise germanium at a concentration of 60 at % ormore.